View FODM8801B_7454986.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

fodm8801x ?optohit series, high-temperature phototransistor optocoupler in half-pitch mini-flat 4-pin package ?010 fairchild semiconductor corporation www.fairchildsemi.com fodm8801x rev. 1.1.2 april 2013 fodm8801a, FODM8801B, fodm8801c optohit series, high-temperature phototransistor optocoupler in half-pitch mini-flat 4-pin package features utilizing proprietary process technology to achieve high operating temperature: up to 125? guaranteed current transfer ratio (ctr) speci?ations across full temperature range ?excellent ctr linearity at high-temperature ?ctr at very low input current, i f high isolation voltage regulated by safety agency: c-ul / ul1577, 3750 vac rms for 1 minute and din en/iec60747-5-5 compact half-pitch, mini-flat, 4-pin package (1.27 mm lead pitch, 2.4 mm maximum standoff height) > 5mm creepage and clearance distance applicable to infrared ray re?w, 245? applications primarily suited for dc-dc converters ground-loop isolation, signal-noise isolation communications ?adapters, chargers consumer ?appliances, set-top boxes industrial ?power supplies, motor control, programmable logic control description in the optohit series, the fodm8801 is a ?st-of-kind phototransistor, utilizing fairchilds leading-edge proprietary process technology to achieve high operating temperature characteristics, up to 125?. the opto- coupler consists of an aluminum gallium arsenide (algaas) infrared light-emitting diode (led) optically coupled to a phototransistor, available in a compact half- pitch, mini-?t, 4-pin package. it delivers high current transfer ratio at very low input current. the input-output isolation voltage, v iso , is rated at 3750 vac rms . schematic package 1 2 4 3 emitter collector anode cathode figure 1. schematic figure 2. half-pitch mini-flat
?010 fairchild semiconductor corporation www.fairchildsemi.com fodm8801x rev. 1.1.2 2 fodm8801x ?optohit series, high-temperature phototransistor optocoupler in half-pitch mini-flat 4-pin package safety and insulation ratings for half-pitch mini-flat package as per din en/iec 60747-5-5. this optocoupler is suitable for ?afe electrical insulation?only within the safety limit data. compliance with the safety ratings shall be ensured by means of protective circuits. symbol parameter min. typ. max. unit installation classi?ations per din vde 0110/1.89 table 1 for rated main voltage < 150 vrms i-iv for rated main voltage < 300 vrms i-iii climatic classi?ation 40/125/21 pollution degree (din vde 0110/1.89) 2 cti comparative tracking index 175 v pr input to output test voltage, method b, viorm x 1.875 = v pr ,100% production test with t m = 1 sec, partial discharge < 5pc 1060 v peak v pr input to output test voltage, method a, viorm x 1.5 = v pr ,type and sample test with t m = 60 sec, partial discharge < 5pc 848 v peak v iorm max working insulation voltage 565 v peak v iotm highest allowable over voltage 4000 v peak external creepage 5 mm external clearance 5 mm insulation thickness 0.5 mm t s i s,input p s,output safety limit values- maximum values allowed in the event of a failure, case temperature input current output power 150 200 300 c ma mw r io insulation resistance at t s ,v io =500 v 10 9
?010 fairchild semiconductor corporation www.fairchildsemi.com fodm8801x rev. 1.1.2 3 fodm8801x ?optohit series, high-temperature phototransistor optocoupler in half-pitch mini-flat 4-pin package absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. t a = 25? unless otherwise speci?d recommended operating conditions the recommended operating conditions table de?es the conditions for actual device operation. recommended operating conditions are speci?d to ensure optimal performance to the datasheet speci?ations. fairchild does not recommend exceeding them or designing to absolute maximum ratings. isolation characteristics notes: 1. derate linearly from 73?c at a rate of 0.24 mw/?c 2. derate linearly from 73?c at a rate of 2.23 mw/?c. 3. functional operation under these conditions is not implied. permanent damage may occur if the device is subjected to conditio ns outside these ratings. 4. device is considered a two-terminal device: pins 1 and 2 are shorted together and pins 3 and 4 are shorted together. 5. 3,750 vac rms for 1 minute is equivalent to 4,500 vac rms for 1 second. symbol parameter value units total package t stg storage temperature -40 to +150 ? t opr operating temperature -40 to +125 ? t j junction temperature -40 to +140 ? t sol lead solder temperature (refer to re?w temperature pro?e on page 13) 260 for 10 s c emitter i f(average) continuous forward current 20 ma v r reverse input voltage 6 v pd led power dissipation (1)(3) 40 mw detector i c(average) continuous collector current 30 ma v ceo collector-emitter voltage 75 v v eco emitter-collector voltage 7 v pd c collector power dissipation (2)(3) 150 mw symbol parameter value units t a operating temperature -40 to +125 ? v fl(off) input low voltage -5.0 to +0.8 v i fh input high forward current 1 to 10 ma symbol parameter test conditions min. typ. max. unit v iso input-output isolation voltage f = 60 hz, t = 1 min., i i-o 10 ? (4)(5) 3,750 vac rms r iso isolation resistance v i-o = 500 v (4) 10 12 c iso isolation capacitance f = 1 mhz 0.3 0.5 pf
?010 fairchild semiconductor corporation www.fairchildsemi.com fodm8801x rev. 1.1.2 4 fodm8801x ?optohit series, high-temperature phototransistor optocoupler in half-pitch mini-flat 4-pin package electrical characteristics apply over all recommended conditions (t a = -40? to +125? unless otherwise speci?d). all typical values are measured at t a = 25?. symbol parameter conditions min. typ. max. units emitter v f forward voltage i f = 1 ma 1.00 1.35 1.80 v v f / t a forward-voltage coef?ient i f = 1 ma -1.6 mv / c i r reverse current v r = 6 v 10 ? c t terminal capacitance v = 0 v, f = 1 mhz 30 pf detector bv ceo collector-emitter breakdown voltage i c = 0.5 ma, i f = 0 ma 75 130 v bv eco emitter-collector breakdown voltage i e = 100 ?, i f = 0 ma 7 12 v i ceo collector dark current v ce = 75 v, i f = 0 ma, t a = 25 c 100 na v ce = 50 v, i f = 0 ma 50 ? v ce = 5 v, i f = 0 ma 30 ? c ce capacitance v ce = 0 v, f = 1 mhz 8 pf
?010 fairchild semiconductor corporation www.fairchildsemi.com fodm8801x rev. 1.1.2 5 fodm8801x ?optohit series, high-temperature phototransistor optocoupler in half-pitch mini-flat 4-pin package transfer characteristics apply over all recommended conditions (t a = -40? to +125? unless otherwise speci?d). all typical values are measured at t a = 25?. symbol parameter device conditions min. typ. max. units ctr ce current transfer ratio (collector-emitter) fodm8801a i f = 1.0 ma, v ce = 5 v @ t a = 25? 80 120 160 % i f = 1.0 ma, v ce = 5 v 35 120 230 % i f = 1.6 ma, v ce = 5 v 40 125 % i f = 3.0 ma, v ce = 5 v 45 138 % FODM8801B i f = 1.0 ma, v ce = 5 v @ t a = 25? 130 195 260 % i f = 1.0 ma, v ce = 5 v 65 195 360 % i f = 1.6 ma, v ce = 5 v 70 202 % i f = 3.0 ma, v ce = 5 v 75 215 % fodm8801c i f = 1.0 ma, v ce = 5 v @ t a = 25? 200 300 400 % i f = 1.0 ma, v ce = 5 v 100 300 560 % i f = 1.6 ma, v ce = 5 v 110 312 % i f = 3.0 ma, v ce = 5 v 115 330 % ctr ce(sat) saturated current transfer ratio (collector-emitter) fodm8801a i f = 1.0 ma, v ce = 0.4 v @ t a = 25? 65 108 150 % i f = 1.0 ma, v ce = 0.4 v 30 108 % i f = 1.6 ma, v ce = 0.4 v 25 104 % i f = 3.0 ma, v ce = 0.4 v 20 92 % FODM8801B i f = 1.0 ma, v ce = 0.4 v @ t a = 25? 90 168 245 % i f = 1.0 ma, v ce = 0.4 v 45 168 % i f = 1.6 ma, v ce = 0.4 v 40 155 % i f = 3.0 ma, v ce = 0.4 v 35 132 % fodm8801c i f = 1.0 ma, v ce = 0.4 v @ t a = 25? 140 238 380 % i f = 1.0 ma, v ce = 0.4 v 75 238 % i f = 1.6 ma, v ce = 0.4 v 65 215 % i f = 3.0 ma, v ce = 0.4 v 55 177 % v ce(sat) saturation voltage fodm8801a i f = 1.0 ma, i c = 0.3 ma 0.17 0.40 v i f = 1.6 ma, i c = 0.4 ma 0.16 0.40 v i f = 3.0 ma, i c = 0.6 ma 0.15 0.40 v FODM8801B i f = 1.0 ma, i c = 0.45 ma 0.17 0.40 v i f = 1.6 ma, i c = 0.6 ma 0.16 0.40 v i f = 3.0 ma, i c = 1.0 ma 0.16 0.40 v fodm8801c i f = 1.0 ma, i c = 0.75 ma 0.18 0.40 v i f = 1.6 ma, i c = 1.0 ma 0.17 0.40 v i f = 3.0 ma, i c = 1.6 ma 0.17 0.40 v
?010 fairchild semiconductor corporation www.fairchildsemi.com fodm8801x rev. 1.1.2 6 fodm8801x ?optohit series, high-temperature phototransistor optocoupler in half-pitch mini-flat 4-pin package switching characteristics apply over all recommended conditions (t a = -40? to +125? unless otherwise speci?d). all typical values are measured at t a = 25?. note: 6. common-mode transient immunity at output high is the maximum tolerable positive dvcm/dt on the leading edge of the common-mode impulse signal, v cm , to assure that the output remains high. symbol parameter device conditions min. typ. max. units t on turn-on time all devices i f = 1.6 ma, v cc = 5 v, r l = 0.75 k 1 6 20 ? i f = 1.6 ma, v cc = 5 v, r l = 4.7 k 6s t off turn-off time all devices i f = 1.6 ma, v cc = 5 v, r l = 0.75 k 1 6 20 ? i f = 1.6 ma, v cc = 5 v, r l = 4.7 k 40 ? t r output rise time (10% to 90%) all devices i f = 1.6 ma, v cc = 5 v, r l = 0.75 k 5s t f output fall time (90% to 10%) all devices i f = 1.6 ma, v cc = 5 v, r l = 0.75 k 5.5 ? cm h common-mode rejection voltage (transient immunity) ? output high all devices t a = 25?, i f = 0 ma, v o > 2.0 v, r l = 4.7 k , v cm = 1000 v (6) , figure 16 20 kv / ? cm l common-mode rejection voltage (transient immunity) output low all devices t a = 25?, i f = 1.6 ma, v o < 0.8 v, r l = 4.7 k , v cm = 1000 v (6) , figure 16 20 kv / ?
?010 fairchild semiconductor corporation www.fairchildsemi.com fodm8801x rev. 1.1.2 7 fodm8801x ?optohit series, high-temperature phototransistor optocoupler in half-pitch mini-flat 4-pin package typical performance curves 100 10 1.0 0.1 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 v f C forward voltage (v) i f C forward current (ma) i c C collector current (ma) v ce = 5.0v v ce = 0.4v figure 3. forward current vs. forward voltage 100 10 1.0 0.1 0.1 1 10 100 i f C forward current (ma) figure 4. collector current vs. forward current ctr C current transfer ratio (%) v ce = 5v t a = 25c 1000 100 10 0.1 1 10 100 i f C forward current (ma) figure 5. current transfer ratio vs. forward current ctr (normalized) = ctr(i f ) / ctr(i f = 1ma) v ce = 5v t a = 25c normalized to i f = 1ma 10 1.0 0.1 0.1 1 10 100 i f C forward current (ma) figure 6. normalized ctr vs. forward current t a = 25c = 25c t a = 125c normalized ctr @ 25c 1.2 1.0 0.8 0.6 0.4 0.2 0 -40 -20 0 20 40 60 80 100 120 t a C ambient temperature (c) figure 7. normalized ctr vs. ambient temperature figure 8. normalized ctr vs. ambient temperature 140 -20 0 20 40 60 80 100 120 140 v ce = 2v i f = 0.5ma i f = 1ma i f = 2ma normalized ctr @ 25c 1.2 1.0 0.8 0.6 0.4 0.2 0 -40 t a C ambient temperature (c) v ce = 5v i f = 0.5ma i f = 1ma i f = 2ma t a = -40c
?010 fairchild semiconductor corporation www.fairchildsemi.com fodm8801x rev. 1.1.2 8 fodm8801x ?optohit series, high-temperature phototransistor optocoupler in half-pitch mini-flat 4-pin package typical performance curves (continued) -20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120 -40 i c C collector current (ma) i f = 20ma i f = 10ma i f = 5.0ma i f = 3.0ma i f = 1.6ma i f = 1.0ma i f = 0.5ma 100 10 1.0 0.1 -40 -20 0 20 40 60 80 100 120 -40 t a C ambient temperature (c) figure 9. collector current vs. ambient temperature i ceo C collector dark current (na) switching time (s) 100000 10000 1000 100 10 1 0.1 0.01 t a C ambient temperature (c) figure 11. collector dark current vs. ambient temperature i c C collector current (ma) t a = 25c i f = 20ma i f = 15ma i f = 10ma i f = 1ma 40 35 30 25 20 15 10 5 0 012345 v ce C collector-emitter voltage (v) figure 10 collector current vs. collector-emitter voltage v ce = 75v v ce(sat) C collector-emitter saturation voltage (v) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 t a C ambient temperature (c) figure 13. collector-emitter saturation voltage vs. ambient temperature i f = 1.6ma, i c = 1.6ma i f = 3.0ma, i c = 1.8ma v ce = 48v v ce = 24v v ce = 10v 1000 100 10 1 0.1 100 100 10 r l C load resistance (k ) figure 12. switching time vs. load resistance t off t on t f t r v ce = 5v v ce = 5v t a = 25c i f = 1.6ma i f = 5ma -40 ctr C current transfer ratio (%) 300 250 200 150 100 50 t a C ambient temperature (c) figure 14. current transfer ration vs. ambient temperature v ce = 5v, i f = 3ma v ce = 5v, i f = 1ma v ce = 0.4v, i f = 1ma v ce = 0.4v, i f = 1.6ma v ce = 0.4v, i f = 3ma v ce = 5v, i f = 1.6ma v ce = 5v
?010 fairchild semiconductor corporation www.fairchildsemi.com fodm8801x rev. 1.1.2 9 fodm8801x ?optohit series, high-temperature phototransistor optocoupler in half-pitch mini-flat 4-pin package test circuits figure 15. test circuit for propagation delay, rise time, and fall time figure 16. test circuit for instantaneous common-mode rejection voltage output pulse v o monitoring node t on r m i f 1 + 2 4 3 pulse generator: tr = 5ns z o = 50 pw = 50s dc = 1% r l = 4.7k +5v v o gnd i f monitor t r t f t off (i f = 1.6ma) v ol 5v 90% 10% input pulse v o (i f = 0ma) v o (i f = 1.6ma) pulse gen v cm v cm r m sw +5v 1kv 0v v oh 2v 0.8v v ol 90% 10% v o monitoring node i f 1 + 2 4 3 r l = 4.7k gnd
?010 fairchild semiconductor corporation www.fairchildsemi.com fodm8801x rev. 1.1.2 10 fodm8801x ?optohit series, high-temperature phototransistor optocoupler in half-pitch mini-flat 4-pin package package dimensions package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to verify or obtain the most recent revision. package speci?ations do not expand the terms of fairchilds worldwide terms and conditions, speci?ally the warranty therein, which covers fairchild products. always visit fairchild semiconductors online packaging area for the most recent package drawings: http://www .f airchildsemi.com/pac kaging/ . 1 4 3 2
?010 fairchild semiconductor corporation www.fairchildsemi.com fodm8801x rev. 1.1.2 11 fodm8801x ?optohit series, high-temperature phototransistor optocoupler in half-pitch mini-flat 4-pin package ordering information all packages are lead free per jedec: j-std-020b standard. x denotes the current transfer ratio option. for example, fodm8801 a r2 is a phototransistor with 80% to 160% ctr in tape and reel packaging. marking information part number current transfer ratio (ctr %) option, i f = 1 ma, v ce = 5 v fodm8801a 80% to 160% FODM8801B 130% to 260% fodm8801c 200% to 400% packing method fodm8801 x tube (100 units per tube) fodm8801 x r2 tape and reel (2500 units per reel) fodm8801 x v tube (100 units per tube), din/en iec60747-5-5 fodm8801 x r2v tape and reel (2500 units per reel), din/en iec60747-5-5 1 2 6 4 3 5 de?itions 1 fairchild logo 2 device number, ? denotes ctr% option (a, b, or c) 3 vde mark (note: only appears on parts ordered with din/en iec60747-5-5 option ?see order entry table) 4 one-digit year code, e.g., ? represents the year 2011 5 two-digit work week ranging from ?1 to ?3 6 assembly package code 8801x x v m yy
?010 fairchild semiconductor corporation www.fairchildsemi.com fodm8801x rev. 1.1.2 12 fodm8801x ?optohit series, high-temperature phototransistor optocoupler in half-pitch mini-flat 4-pin package tape and reel dimensions d d w k t d 1 0 p p a p 0 b 0 0 2 e f w 1 0 reel diame ter devices per reel max. component rotation or tilt cover tape thicknes s cover tape width pocket hole diameter pocket dimension pocket location sprocket hole location sprocket hole diameter sprocket hole pitch tape thickness pocket p itch tape width symbol description b d w 1 d k 0 1 0 e a p 0 p f 2 d p 0 0 t w 330 mm (13") dimensions (mm) 12.00 +0.30 / -0.10 7.30 0.10 10 max. 2500 1.50 min. 2.30 0.10 0.065 0.010 9 .20 1.75 0.10 8.00 0.10 2.00 0.10 5.50 0.10 2.80 0.10 1.50 +0.10 / -0.0 4.00 0.10 0.30 0.05 1.27 pitch
?010 fairchild semiconductor corporation www.fairchildsemi.com fodm8801x rev. 1.1.2 13 fodm8801x ?optohit series, high-temperature phototransistor optocoupler in half-pitch mini-flat 4-pin package re?w pro?e figure 17. re?w pro?e pro?e freature pb-free assembly pro?e temperature min. (tsmin) 150 c temperature max. (tsmax) 200 c time (t s ) from (tsmin to tsmax) 60?20 seconds ramp-up rate (t l to t p )3 c/second max. liquidous temperature (t l ) 217 c time (t l ) maintained above (t l ) 60?50 seconds peak body package temperature 245 c +0 c / ? c time (t p ) within 5 c of 260 c 30 seconds ramp-down rate (t p to t l )6 c/second max. time 25 c to peak temperature 8 minutes max. temperature (?) 260 240 220 200 180 160 140 120 100 80 60 40 20 0 t l t s t l t p t p 245 ts m a x ts m i n 120 max. ramp-up rate = 3c/s max. ramp-down rate = 6c/s 240 360 time (seconds) time 25c to peak
?010 fairchild semiconductor corporation www.fairchildsemi.com fodm8801x rev. 1.1.2 14 fodm8801x ?optohit series, high-temperature phototransistor optocoupler in half-pitch mini-flat 4-pin package

▲Up To Search▲

Price & Availability of FODM8801B

	To Download FODM8801B Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .